Reverse voltage protection circuits for power MOSFETs in low dropout power applications
Author:
Affiliation:
1. School of Microelectronics, Tianjin University
2. College of Electronic Information and Optical Engineering, Nankai University
3. Beijing Smartchip Microelectronics Technology Company Limited
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/19/19/19_19.20220347/_pdf
Reference30 articles.
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2. [2] W.-C. Chen, et al.: “94% power-recycle and near-zero driving-dead-zone N-type low-dropout regulator with 20mV undershoot at short-period load transient of flash memory in smart phone,” 2018 IEEE International Solid-State Circuits Conference (ISSCC) (2018) 436 (DOI: 10.1109/ISSCC.2018.8310371).
3. [3] J. Pérez-Bailón, et al.: “An all-MOS low-power fast-transient 1.2V LDO regulator,” 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (2017) 337 (DOI: 10.1109/PRIME.2017.7974176).
4. [4] H.H. Hammam, et al.: “A low power high PSR wide load LDO with load-dependent feedforward cancellation technique,” 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) (2021) 216 (DOI: 10.1109/MWSCAS47672.2021.9531681).
5. [5] A. Van den Bossche, et al.: “Mosfets used in ideal diode circuits for Lundell alternator rectifiers,” 2018 Thirteenth International Conference on Ecological Vehicles and Renewable Energies (EVER) (2018) 1 (DOI: 10.1109/EVER.2018.8362385).
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1. Lifetime prediction of power MOSFET based on LSTM with successive variational mode decomposition and error compensation;IEICE Electronics Express;2023-08-25
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