Neutron Produced Trapping Centers in Junction Field Effect Transistors-Reference-Cited by-同舟云学术

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Neutron Produced Trapping Centers in Junction Field Effect Transistors

Published:1971 Issue:6 Volume:18 Page:50-59
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Gregory B. L.,Naik S. S.,Oldham W. G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4326399/04326413.pdf?arnumber=4326413

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Displacement Damage Effects in Irradiated Semiconductor Devices;IEEE Transactions on Nuclear Science;2013-06

2. PICTS analysis of extended defects in heavily irradiated silicon;IEEE Transactions on Nuclear Science;2002-10

3. Photo-induced current transient spectroscopy of defect clusters in heavily irradiated silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-06

4. Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMT's with single- and double-recessed gate structures;IEEE Transactions on Electron Devices;1997-05

5. Low-frequency dispersion characteristics of GaN HFETs;Electronics Letters;1995-10-26

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