Photo-induced current transient spectroscopy of defect clusters in heavily irradiated silicon-Reference-Cited by-同舟云学术

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Photo-induced current transient spectroscopy of defect clusters in heavily irradiated silicon

Published:2002-06 Issue:1-2 Volume:485 Page:146-152
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Menichelli David,Bruzzi Mara

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. ATLAS Collaboration, Technical Proposal, CERN/LHCC/94-43, LHCC/P2, 1994.

2. CMS: The Compact Muon Solenoid Technical Proposal, CERN/LHCC/94-38, 1994.

3. Correlation of Radiation Types with Radiation Effects

4. Defects in silicon: Concepts and correlations

5. Energy Dependence of Displacement Effects in Semiconductors

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1. Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement;Applied Surface Science;2020-05

2. Barrier controlled carrier trapping of extended defects in CdZnTe detector;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-09

3. Effect of defect clusters on carrier recombination in high-resistivity CdZnTe;Journal of Applied Physics;2013-11-21

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