Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-$\mu{\hbox{m}}$ Metamorphic High Electron-Mobility Transistors-Reference-Cited by-同舟云学术

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Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-$\mu{\hbox{m}}$ Metamorphic High Electron-Mobility Transistors

Published:2009-06 Issue:6 Volume:57 Page:1487-1493
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Jung-Hun Oh ,Min Han ,Sang-Jin Lee ,Byoung-Chul Jun ,Sung-Woon Moon ,Jae-Seo Lee ,Jin-Koo Rhee ,Sam-Dong Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5071758/04912426.pdf?arnumber=4912426

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scalability of Multifinger HEMT Performance;IEEE Microwave and Wireless Components Letters;2020-09

2. Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis;IEEE Transactions on Microwave Theory and Techniques;2016-05

3. Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances;IEEE Transactions on Microwave Theory and Techniques;2014-12

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