Funder
eEurostars through the MicromodGaN
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by
13 articles.
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1. Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs;IEEE Microwave and Wireless Technology Letters;2024-09
2. On large-signal modeling of GaN HEMTs: past, development and future;Chip;2023-09
3. GaN HEMT Modeling versus Bias Point and Gate Width;2023 58th International Scientific Conference on Information, Communication and Energy Systems and Technologies (ICEST);2023-06-29
4. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures;Journal of Materials Science: Materials in Electronics;2023-04
5. Measurement and Modeling of GaAs Based Nano-pHEMT: Small Signal to Large Signal Analysis;2023 International Conference on Electrical, Computer and Communication Engineering (ECCE);2023-02-23