GaN-based SSD structure for THz applications-Reference-Cited by-同舟云学术

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GaN-based SSD structure for THz applications

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Asia-Pacific Microwave Conference (APMC)
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Author:

Agrawal Manvi,Nethaji Dharmarasu,Radhakrishnan K,Gaquiere Christophe,Ducournau Guillaume,Lesecq Marie,Mateos Javier,Gonzalez Tomas,Iniguez-De-La-Torre Ignacio,Garcia Sergio,Perez Susana

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9027807/9038168/09038338.pdf?arnumber=9038338

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-07

4. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes;IEEE Transactions on Electron Devices;2023-06

5. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes;IEEE Transactions on Electron Devices;2022-02

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