0.2 Micron length T-shaped gate fabrication using angle evaporation-Reference-Cited by-同舟云学术

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0.2 Micron length T-shaped gate fabrication using angle evaporation

Published:1983-04 Issue:4 Volume:4 Page:122-124
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chao P.C.,Ku W.H.,Smith P.M.,Perkins W.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31888/01483415.pdf?arnumber=1483415

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review;Micro and Nano Engineering;2021-11

2. Alternative Spin-On-Glass (SoG) material characterization For Deep-Submicron (<0.35 um) soft reflow fabrication process;IOP Conference Series: Materials Science and Engineering;2018-06

3. Nanofabrication by electron beam lithography and its applications: A review;Microelectronic Engineering;2015-03

4. Fabrication of 0.15-$\mu\hbox{m}$$\Gamma$-Shaped Gate $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}/\hbox{In}_{0.6}\hbox{Ga}_{0.4}\hbox{As}$ Metamorphic HEMTs Using DUV Lithography and Tilt Dry-Etching Technique;IEEE Electron Device Letters;2007-02

5. T-gate fabrication using a ZEP520A/UVIII bilayer;Microelectronic Engineering;2001-09

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