Analysis of the channel inversion layer capacitance in the very thin-gate IGFET-Reference-Cited by-同舟云学术

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Analysis of the channel inversion layer capacitance in the very thin-gate IGFET

Published:1983-07 Issue:7 Volume:4 Page:236-239
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Oh S.-Y.,Choi S.-G.,Sodini C.G.,Moll J.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31891/01483461.pdf?arnumber=1483461

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