An analytical model for square GAA MOSFETs including quantum effects

Author:

Moreno E.,Roldán J.B.,Ruiz F.G.,Barrera D.,Godoy A.,Gámiz F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. International Technology Roadmap for Semiconductors; 2007 and the 2008 update. .

2. Vandooren A. Multiple gates and strained films for SOI MOSFETs. In: EUROSOI – Second workshop of the thematic network on silicon on insulator technology, devices and circuits, Grenoble; March 8–10th, 2006.

3. Silicon-on-insulator technology: materials to VLSI;Colinge,2004

4. Random-dopant-induced drain current variation in nano-MOSFETs: a three dimensional self-consistent monte carlo simulation study using ab-initioionized impurity scattering;Craig;IEEE Trans Electron Dev,2008

5. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1μm MOSFET’s: a 3-d atomistic simulation study;Asenov;IEEE Trans Electron Dev,1998

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