Author:
Moreno E.,Roldán J.B.,Ruiz F.G.,Barrera D.,Godoy A.,Gámiz F.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. International Technology Roadmap for Semiconductors; 2007 and the 2008 update. .
2. Vandooren A. Multiple gates and strained films for SOI MOSFETs. In: EUROSOI – Second workshop of the thematic network on silicon on insulator technology, devices and circuits, Grenoble; March 8–10th, 2006.
3. Silicon-on-insulator technology: materials to VLSI;Colinge,2004
4. Random-dopant-induced drain current variation in nano-MOSFETs: a three dimensional self-consistent monte carlo simulation study using ab-initioionized impurity scattering;Craig;IEEE Trans Electron Dev,2008
5. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1μm MOSFET’s: a 3-d atomistic simulation study;Asenov;IEEE Trans Electron Dev,1998
Cited by
27 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献