Experiment and Simulation on Single-Event Transient Effects of the MOS Capacitor in LDO-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Experiment and Simulation on Single-Event Transient Effects of the MOS Capacitor in LDO

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
language:
Short-container-title:

Author:

Sui Chenglong¹,Wang Liang¹,Han Xupeng¹,Liu Jiaqi¹,Cao Weiyi¹,Shu Lei²,Li Tongde¹,Zhao Yuanfu¹

Affiliation:

1. Beijing Microelectronics Technology Institute,Beijing,China,100076

2. Harbin Institute of Technology,Electronic Science and Technology Department,Harbin,China,150000

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9745606/9745637/09745705.pdf?arnumber=9745705

Reference5 articles.

1. Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

2. Single-Event Transients in Voltage Regulators

3. Single-event current transients induced by high energy ion microbeams

4. A single-event transient hardened LDO regulator with built-in filter

5. Single-Event Transient Analysis and Hardening in a180nmCMOSEmbedded Low-Dropout Regulator;wang;RADECS 2017,0

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of LDO Induced Increment of SEE Sensitivity for 22-nm FDSOI SRAM;IEEE Transactions on Device and Materials Reliability;2023-12

2. A Single-Event Transient (SET) Tolerant Dynamic Bias Comparator in 65-nm CMOS;2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS);2023-08-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP