Direct etched Cu characterization for advanced interconnects-Reference-Cited by-同舟云学术

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Direct etched Cu characterization for advanced interconnects

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)
language:
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Author:

Wen Lianggong,Yamashita Fumiko,Tang Baojun,Croes Kristof,Tahara Shigeru,Shimoda Keiichi,Maeshiro Takeru,Nishimura Eiichi,Lazzarino Frederic,Ciofi Ivan,Bommels Jurgen,Tokei Zsolt

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7312584/7325582/07325613.pdf?arnumber=7325613

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Materials for Interconnections of Integrated Circuits with Design Standards Less Than 5 nm;Russian Microelectronics;2024-02

2. Patterning challenges for direct metal etch of ruthenium and molybdenum at 32 nm metal pitch and below;Journal of Vacuum Science & Technology B;2022-05

3. Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing;IEEE Transactions on Semiconductor Manufacturing;2020-05

4. Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics;Nature Communications;2019-08-19

5. A novel electromigration characterization method based on low-frequency noise measurements;Semiconductor Science and Technology;2019-06-07

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