Review of reliability issues in high-k/metal gate stacks-Reference-Cited by-同舟云学术

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Review of reliability issues in high-k/metal gate stacks

Published:2008-07 Issue: Volume: Page:
ISSN:
Container-title:2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits
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Author:

Degraeve R.,Aoulaiche M.,Kaczer B.,Roussel Ph.,Kauerauf T.,Sahhaf S.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4579686/4588140/04588195.pdf?arnumber=4588195

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulating the Performance of MoS₂-Based Nanocrystal Memory via Ag Ion Implantation;ACS Applied Electronic Materials;2023-05-26

2. Impact of OFF-State, HCI and BTI degradation in FDSOI Ω-gate NW-FETs;Solid-State Electronics;2023-05

3. CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging;Solid-State Electronics;2022-05

4. Benefits of using arrays of vertical nanowire FETs in integrated circuits to mitigate variability;Semiconductor Science and Technology;2021-11-12

5. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits;Solid-State Electronics;2016-11

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