SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz-Reference-Cited by-同舟云学术

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SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

Published:2010-12 Issue:12 Volume:31 Page:1398-1400
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Muller Alexandru,Neculoiu Dan,Konstantinidis George,Deligeorgis George,Dinescu Adrian,Stavrinidis Antonis,Cismaru Alina,Dragoman Mircea,Stefanescu Alexandra

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5635414/05608488.pdf?arnumber=5608488

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor;Science China Information Sciences;2023-10-30

2. Sezawa Mode Enhancement of SAW Resonators on GaN-on-insulator by Optimizing the Metal Thickness and its Application to RF Filters;2023 53rd European Microwave Conference (EuMC);2023-09-19

3. GaN surface acoustic wave filter with low insertion loss;Ultrasonics;2023-07

4. Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering;Materials Research;2023

5. A GHz Operating CMOS Compatible ScAlN Based SAW Resonator Used for Surface Acoustic Waves/Spin Waves Coupling;IEEE Electron Device Letters;2022-09

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