Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Published:2010-11 Issue: Volume: Page:
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim Sungchul,Jeon Yongwoo,Lee Je-Hun,Ahn Byung Du,Park Sei Yong,Park Jun-Hyun,Kim Joo Han,Park Jaewoo,Kim Dong Myong,Kim Dae Hwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5607217/05565388.pdf?arnumber=5565388

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Ideal Low‐Frequency Noise in Monolayer CVD MoS₂ FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management;Advanced Science;2024-05-21

2. Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?;Advanced Electronic Materials;2023-12-17

3. Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO_X Dielectric;IEEE Transactions on Electron Devices;2023-02

4. Low-Frequency Noise Modeling of Amorphous Indium–Zinc-Oxide Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-11

5. Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric;IEEE Journal of the Electron Devices Society;2022

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP