Author:
Ertosun M Gunhan,Kwan-Yong Lim ,Chanro Park ,Jungwoo Oh ,Kirsch Paul,Saraswat Krishna C
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GIDL Analysis of 1T1C Structure for Sub-20nm DRAM Cell;2022 IEEE 16th International Conference on Anti-counterfeiting, Security, and Identification (ASID);2022-12-02
2. A Novel Interface Trap 1T0C In-Ga-Zn Oxide DRAM Cell with Enhanced Data Retention;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
3. A Novel FinFET With High-Speed and Prolonged Retention for Dynamic Memory;IEEE Electron Device Letters;2014-12
4. Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation;IEEE Electron Device Letters;2014-01