Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer-Reference-Cited by-同舟云学术

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Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Published:2011-03 Issue:3 Volume:32 Page:390-392
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Yu-Sheng,Lee Heng-Yuan,Chen Pang-Shiu,Gu Pei-Yi,Liu Wen-Hsing,Chen Wei-Su,Hsu Yen-Ya,Tsai Chen-Han,Chen Frederick,Tsai Ming-Jinn,Lien Chenhsin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5719018/05704542.pdf?arnumber=5704542

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3. Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor;Applied Surface Science;2022-11

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