Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI-Reference-Cited by-同舟云学术

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Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Published:2010-06 Issue:6 Volume:31 Page:537-539
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Urban Christoph,Emam Mostafa,Sandow Christian,Knoch Joachim,Qing-Tai Zhao ,Raskin Jean-Pierre,Mantl Siegfried

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5471728/05447656.pdf?arnumber=5447656

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and simulation assessment of dual material gate Delta(δ) doped fully depleted SOI-FET with effect of interface trap charges;Micro and Nanostructures;2023-07

2. Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing;ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC);2022-09-19

3. Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications;IEEE Journal of the Electron Devices Society;2022

4. 4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses;ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC);2021-09-13

5. Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications;ACS Applied Materials & Interfaces;2021-06-25

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