Modeling and simulation assessment of dual material gate Delta(δ) doped fully depleted SOI-FET with effect of interface trap charges
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
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1. Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges;Japanese Journal of Applied Physics;2023-11-24
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