Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources-Reference-Cited by-同舟云学术

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

Published:2010-07 Issue:7 Volume:31 Page:731-733
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhen Zhang ,Pagette F,D'Emic C,Yang B,Lavoie C,Zhu Y,Hopstaken M,Maurer S,Murray C,Guillorn M,Klaus D,Bucchignano J,Bruley J,Ott J,Pyzyna A,Newbury J,Song W,Chhabra V,Zuo G,Lee K.-L,Ozcan A,Silverman J,Ouyang Q,Park D.-G,Haensch W,Solomon P M

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5492327/05473039.pdf?arnumber=5473039

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