Demonstration of a Wafer Level Face- To-Back (F2B) Fine Pitch Cu-Cu Hybrid Bonding with High Density TSV for 3D Integration Applications
Author:
Affiliation:
1. CEA-Leti, Univ. Grenoble Alpes,Grenoble,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195695.pdf?arnumber=10195695
Reference13 articles.
1. Recent Progress in the Development of High-Density TSV for 3-Layers CMOS Image Sensors;borel;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC),2023
2. Next generation image sensor via direct hybrid bonding
3. Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability
4. A reliable copper-free wafer level hybrid bonding technology for high-performance medical imaging sensors
5. Multi-Stack Wafer Bonding Demonstration utilizing Cu to Cu Hybrid Bonding and TSV enabling Diverse 3D Integration
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1. Backside Thinning Process Development for High-Density TSV in a 3-Layer Integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
2. 3-layer Fine Pitch Cu-Cu Hybrid Bonding Demonstrator With High Density TSV For Advanced CMOS Image Sensor Applications;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
3. Low Resistance and High Isolation HD TSV for 3-Layer CMOS Image Sensors;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
4. A Review on Hybrid Bonding Interconnection and Its Characterization;IEEE Nanotechnology Magazine;2024-04
5. State of the Art of Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03
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