3-layer Fine Pitch Cu-Cu Hybrid Bonding Demonstrator With High Density TSV For Advanced CMOS Image Sensor Applications
Author:
Affiliation:
1. Univ. Grenoble Alpes,CEA, LETI, Grenoble,Grenoble,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565164.pdf?arnumber=10565164
Reference14 articles.
1. Recent Advances and Trends in Cu–Cu Hybrid Bonding
2. Development of 3-layer stacked global shutter CMOS image sensor with pixel pitch Cu-to-Cu interconnection and high-capacity capacitors
3. Development of face-to-face and face-to-back ultra-fine pitch Cu-Cu hybrid bonding
4. Pixel Pitch Hybrid Bonding and Three Layer Stacking Technology for BSI Image Sensor
5. Multi-tier $\mathrm{N}=4$ Binary Stacking, combining Face-to-Face and Back-to-Back Hybrid Wafer-to-Wafer Bonding Technology
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Backside Thinning Process Development for High-Density TSV in a 3-Layer Integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
2. Low Resistance and High Isolation HD TSV for 3-Layer CMOS Image Sensors;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
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