Characterization of 300 mm Low Temperature SiCN PVD Films for Hybrid Bonding application
Author:
Affiliation:
1. Intel Corporation,Hillsboro,Oregon
2. Evatec AG,Trübbach,Switzerland
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195680.pdf?arnumber=10195680
Reference16 articles.
1. Film Characterization of Low-Temperature Silicon Carbon Nitride for Direct Bonding Applications
2. Pre-bonding Characterization of SiCN Enabled Wafer Stacking
3. Structural identification of the silicon and nitrogen dangling‐bond centers in amorphous silicon nitride
4. Silicon carbon nitride films as passivation and antireflective coatings for silicon solar cells
5. Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding
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