Analytical Modeling of IGBTs: Challenges and Solutions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/6415298/06343228.pdf?arnumber=6343228
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An Analytical Temperature-Dependent Turn-Off Model for High-Voltage Field-Stop IGBTs Considering the Influence of Drive Circuit;IEEE Transactions on Power Electronics;2024-08
2. Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study;Electronics;2024-06-15
3. Thermo-sensitive electrical parameters of high-power IGBTs based on gate-emitter voltage measurement during switching delay intervals;Microelectronics Reliability;2023-12
4. Optimized design of single trench termination combined with P-type buried layers for power MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Performance Consistency Metric Considering Two-Dimensional Performance Characterization for IGBTs;2023 7th International Conference on System Reliability and Safety (ICSRS);2023-11-22
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