A new gradual hole injection dual-gate LIGBT-Reference-Cited by-同舟云学术

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A new gradual hole injection dual-gate LIGBT

Published:1998-12 Issue:12 Volume:19 Page:490-492
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Byeong-Hoon Lee ,Jung-Hoon Chun ,Seong-Dong Kim ,Dae-Seok Byeon ,Won-Oh lee ,Min-Koo Han ,Yearn-Ik Choi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx4/55/15823/00735756.pdf?arnumber=735756

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS;IEEE Transactions on Electron Devices;2024-06

2. An RC-LIGBT With Dual Self-Driving nMOS For Enhancing Short Circuit Property and Modulating Electron Injection;IEEE Transactions on Electron Devices;2023-12

3. An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss;IEEE Transactions on Electron Devices;2023-04

4. Fabrication and Investigation of a Lateral Insulated Gate-Bipolar-Transistor With Ultrafast Turn-Off Speed;IEEE Electron Device Letters;2020-04

5. Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode;IEEE Transactions on Electron Devices;2019-01

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