An SOI LTIGBT With Self-Biased pMOS for Improved Short-Circuit Property and Reduced Turn-Off Loss
Author:
Affiliation:
1. College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China
2. Department of College of Electronics Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China
Funder
National Nature Science Foundation of China
Chongqing Technology Innovation and Application Development
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10041016.pdf?arnumber=10041016
Reference23 articles.
1. A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
2. Analysis of the Fast-Switching LIGBT With Double Gates and Integrated Schottky Barrier Diode
3. A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes
4. Analysis of the novel Snapback-Free LIGBT with fast-switching and improved latch-up immunity by TCAD Simulation
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1. A Low Energy Loss Superjunction LIGBT with Integrated Double Self-Biased MOS;Silicon;2024-08-14
2. A Snapback-Free and Low-Loss RC-LIGBT With Integrated Double Self-Biased nMOS;IEEE Transactions on Electron Devices;2024-06
3. Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top;Microelectronics Journal;2024-05
4. Active trench barrier RC-IGBT with pinch-off and carrier accumulation effects;Journal of Power Electronics;2024-02-27
5. A Fast-Switching and Short-Circuit Enhanced Soi Ligbt with a Self-Driving P-Mos;2024
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