Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors-Reference-Cited by-同舟云学术

Effect of Helium-Implanted Edge Termination on GaN-on-GaN Schottky Barrier Diode Temperature Sensors

Published:2023-12-15 Issue:24 Volume:23 Page:30112-30118
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Li Xiaobo¹^ORCID,Lin Feng¹,Pu Taofei¹^ORCID,Li Xicong²^ORCID,Li Bo¹,Li Shuai¹,Han Jiajun³,Wang Xinzhong⁴^ORCID,Lu Youming¹,Liu Xinke¹^ORCID

Affiliation:

1. College of Materials Science and Engineering, Institute of Microelectronics (IME), Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen, China

2. Faculty of Engineering and Environment, Northumbria University, Newcastle, U.K

3. Dongguan Sino Nitride Semiconductor Company Ltd., Dongguan, China

4. Information Technology Research Institute and the Shenzhen Institute of Information Technology, Shenzhen, China

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Guangdong Science Foundation for Distinguished Young Scholars

Shenzhen Science and Technology Program

Science and Technology Program of Ningbo, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/10360293/10304071.pdf?arnumber=10304071

Reference19 articles.

1. Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. Gallium nitride devices for power electronic applications

4. Recent development of vertical GaN power devices

5. High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates

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