Analysis and Parameter Optimization of High Dynamic Range Pixels for Split Photodiode in CMOS Image Sensors
Author:
Affiliation:
1. School of Microelectronics, Tianjin University, Tianjin, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9745626/09723040.pdf?arnumber=9723040
Reference26 articles.
1. Analysis and Modeling of the Light-Dependent Full Well Capacity of the 4-T Pixel in CMOS Image Sensors
2. Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors
3. Dynamic Capacitance Model of a Pinned Photodiode in CMOS Image Sensors
4. 1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET
5. [Papers] Statistical Analyses of Random Telegraph Noise in Pixel Source Follower with Various Gate Shapes in CMOS Image Sensor
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