AlGaN-Based Self-Powered Solar-Blind UV Focal Plane Array Imaging Photosensors: Material Growth, Device Preparation, and Functional Verification
Author:
Affiliation:
1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
Funder
Independent Project of State Key Laboratory of Luminescence and Applications
National International Science and Technology Cooperation Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/10251409/10066267.pdf?arnumber=10066267
Reference33 articles.
1. High-Responsivity MSM Solar-Blind UV Photodetector Based on Annealed ITO/Ag/ITO Structure Using RF Sputtering
2. Ultrasensitive Solar‐Blind Ultraviolet Photodetector Based on FePSe 3 /MoS 2 Heterostructure Response to 10.6 µm
3. Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD
4. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
5. Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect
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