Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices-Reference-Cited by-同舟云学术

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Published:2022-05-30 Issue:1 Volume:11 Page:
ISSN:2047-7538
Container-title:Light: Science & Applications
language:en
Short-container-title:Light Sci Appl

Author:

Nguyen Hieu. P. T.^ORCID

Abstract

AbstractGraphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

Funder

New Jersey Health Foundation

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41377-022-00861-1.pdf

Reference18 articles.

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5. Kneissl, M. et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics 13, 233–244 (2019).

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