Applications of Gallium Nitride in power electronics
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6495583/6506021/06506025.pdf?arnumber=6506025
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First principles insight into magneto-electronic and optical properties of half-metallic-ferromagnetism binary GaN compound for spintronic applications;Indian Journal of Physics;2024-08-30
2. A Gallium Nitride Based High Bandwidth, Extended Single-Ended Primary Inductance Converter, for Fast Balancing of Ultracapacitors;Electric Power Components and Systems;2023-11-14
3. Improving optical properties of wurtzite GaN with C and Fe co-doping: A DFT+U study;Journal of Physics Communications;2022-10-01
4. Prediction of overshoot and crosstalk of low‐voltage GaN HEMT using analytical model;IET Power Electronics;2022-05-12
5. Thermal and Mechanical Design of a High-Voltage Power Electronics Package;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14
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