In situ monitoring and control for MBE growth of optoelectronic devices-Reference-Cited by-同舟云学术

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In situ monitoring and control for MBE growth of optoelectronic devices

Published:1997-06 Issue:3 Volume:3 Page:836-844
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Jackson A.W.,Pinsukanjana P.R.,Gossard A.C.,Coldren L.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx3/2944/13897/00640637.pdf?arnumber=640637

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

2. Long-term stability of GaAs/AlAs terahertz quantum-cascade lasers;AIP Advances;2022-08-01

3. Analysis of the Parameters of Atomic and Molecular Beams in Molecular Beam Epitaxy Installations;Journal of Communications Technology and Electronics;2021-12

4. In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis;Journal of Crystal Growth;2021-03

5. High-Performance GaAs/AlAs Terahertz Quantum-Cascade Lasers For Spectroscopic Applications;IEEE Transactions on Terahertz Science and Technology;2020-03

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