A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs-Reference-Cited by-同舟云学术

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A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs

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Container-title:Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)
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Author:

Gila B.P.,Lee K.N.,Johnson W.,Ren F.,Abernathy C.R.,Pearton S.J.,Hong M.,Kwo J.,Mannaerts J.P.,Anselm K.A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7236/19520/00902537.pdf?arnumber=902537

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EFFECTIVE GaN SURFACE PASSIVATION BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE;International Journal of Nanoscience;2012-08

2. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-01

3. ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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