SiGe BiCMOS building blocks for a K/Ka-band flexible phased array system for SatCom applications
Author:
Affiliation:
1. SIAE Microelettronica,R&D Department,Cologno Monzese,Italy
Funder
European Commission
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9823395/9825496/09825538.pdf?arnumber=9825538
Reference13 articles.
1. A high gain wideband 77GHz SiGe power amplifier
2. A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power
3. A highly compact, 16.8 dBm Pgat Ka-band power amplifier in 250 nm SiGe:C BiCMOS
4. A Ka-Band Highly Linear Power Amplifier with a Linearization Bias Circuit
5. 0.25- $\mu \text{m}$ BiCMOS System-on-Chip for K-/Ka-Band Satellite Communication Transmit–Receive Active Phased Arrays
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design of Single-Ended and Differential Power Amplifiers using SiGe HBT for SATCOM Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11
2. A tile-based approach to SatCom user terminal design;2023 IEEE International Workshop on Technologies for Defense and Security (TechDefense);2023-11-20
3. K-band Receiver on SiGe BiCMOS Technology for SatCom Phased Array Systems;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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