A Ka-Band Highly Linear Power Amplifier with a Linearization Bias Circuit-Reference-Cited by-同舟云学术

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A Ka-Band Highly Linear Power Amplifier with a Linearization Bias Circuit

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

Wang Dehan,Chen Wenhua,Chen Long,Liu Xin,Feng Zhenghe

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8697340/8700641/08701069.pdf?arnumber=8701069

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22

2. A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner;IEEE Journal of Solid-State Circuits;2022-12

3. SiGe BiCMOS building blocks for a K/Ka-band flexible phased array system for SatCom applications;2022 Microwave Mediterranean Symposium (MMS);2022-05-09

4. A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner;IEEE Microwave and Wireless Components Letters;2021-11

5. A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE;IEEE Transactions on Circuits and Systems II: Express Briefs;2021-04

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