A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner-Reference-Cited by-同舟云学术

A 110-to-130 GHz SiGe BiCMOS Doherty Power Amplifier With a Slotline-Based Power Combiner

Published:2022-12 Issue:12 Volume:57 Page:3567-3581
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Li Xingcun¹^ORCID,Chen Wenhua¹^ORCID,Wu Huibo¹^ORCID,Li Shuyang¹^ORCID,Yi Xiang²^ORCID,Han Ruonan³^ORCID,Feng Zhenghe¹

Affiliation:

1. Department of Electronic Engineering, Tsinghua University, Beijing, China

2. School of Microelectronics, South China University of Technology, Guangzhou, China

3. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA

Funder

National Key Research and Development Program of China

National Science Fund for Distinguished Young Scholars

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9962295/09919878.pdf?arnumber=9919878

Reference63 articles.

1. Broadband Active Load-Modulation Power Amplification Using Coupled-Line Baluns: A Multifrequency Role-Exchange Coupler Doherty Amplifier Architecture

2. Toward a More Generalized Doherty Power Amplifier Design for Broadband Operation

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4. Amping Up the PA for 5G: Efficient GaN Power Amplifiers with Dynamic Supplies

5. A hybrid supply modulator with 10 dB ET operation dynamic range achieving a PAE of 42.6% at 27.0 dBm PA output power;lee;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2015

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