An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique-Reference-Cited by-同舟云学术

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An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique

Published:2011-11 Issue:11 Volume:58 Page:3667-3673
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Sungho,Choi Sung-Jin,Moon Dong-Il,Choi Yang-Kyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6051730/06004828.pdf?arnumber=6004828

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Telegraph Noise in Analog CMOS Circuits;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-06

2. Investigation of Hot Carrier–induced Degradation in Nanoscale JunctionlessMOSFETs: A Reliability‐based Analysis;Nanotechnology in Electronics;2022-10-07

3. Extraction of Interface Trap Density Through Synchronized Optical Charge Pumping in Gate-All-Around MOSFETs;IEEE Electron Device Letters;2020-11

4. A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping;IEEE Transactions on Electron Devices;2017-08

5. A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs;IEEE Transactions on Electron Devices;2016-09

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