Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors-Reference-Cited by-同舟云学术

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Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors

Published:2011-06 Issue:6 Volume:58 Page:1696-1701
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chee Hing Tan ,Gomes R B,David J P R,Barnett A M,Bassford D J,Lees J E,Jo Shien Ng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5770363/05739107.pdf?arnumber=5739107

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variance and skewness of the multiplication gain distribution in uniform avalanche diodes;Frontiers in Physics;2024-08-21

2. Temperature dependence characteristics and noise characteristics of InGaAs/InAlAs X-ray APDs;2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings (ACP/POEM);2023-11-04

3. Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection;Frontiers in Physics;2022-08-30

4. A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-10

5. Al0.6Ga0.4As x-ray avalanche photodiodes for spectroscopy;Semiconductor Science and Technology;2020-08-12

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