Device Characteristics and Equivalent Circuits for NMOS Gate-to-Drain Soft and Hard Breakdown in Polysilicon/SiON Gate Stacks-Reference-Cited by-同舟云学术

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Device Characteristics and Equivalent Circuits for NMOS Gate-to-Drain Soft and Hard Breakdown in Polysilicon/SiON Gate Stacks

Published:2011-04 Issue:4 Volume:58 Page:1170-1175
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nicollian Paul E.,Cakici Riza Tamer,Krishnan Anand T.,Reddy Vijay K.,Seshadri Anand

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5737855/05712183.pdf?arnumber=5712183

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SPICE simulation of the time-dependent clustering model for dielectric breakdown;Solid-State Electronics;2024-05

2. Ultra-thin dielectric breakdown in devices and circuits: A brief review;Microelectronics Reliability;2015-02

3. nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits;IEEE Transactions on Electron Devices;2014-01

4. Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown;Microelectronic Engineering;2013-09

5. Analysis and Simulation of the Postbreakdown $I-V$ Characteristics of n-MOS Transistors in the Linear Response Regime;IEEE Electron Device Letters;2013-06

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