Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon-Reference-Cited by-同舟云学术

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Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Published:2011-11 Issue:11 Volume:58 Page:3933-3939
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chai Yang,Wu Yi,Takei Kuniharu,Chen Hong-Yu,Yu Shimeng,Chan Philip C. H.,Javey Ali,Wong H.-S. Philip

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6051730/06026917.pdf?arnumber=6026917

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