Integrated HfO<inf>2</inf>-RRAM to achieve highly reliable, greener, faster, cost-effective, and scaled devices-Reference-Cited by-同舟云学术

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Integrated HfO2-RRAM to achieve highly reliable, greener, faster, cost-effective, and scaled devices

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Ho ChiaHua,Chang Shuo-Che,Huang Chao-Yi,Chuang Yu-Cheng,Lim Seow-Fong,Hsieh Ming-Huei,Chang Shu-Cheng,Liao Hsiu-Han

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268314.pdf?arnumber=8268314

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NeuroSim V1.4: Extending Technology Support for Digital Compute-in-Memory Toward 1nm Node;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04

2. A Concealable RRAM Physical Unclonable Function Compatible with In-Memory Computing;2024 Design, Automation & Test in Europe Conference & Exhibition (DATE);2024-03-25

3. Stochastic-HD: Leveraging Stochastic Computing on the Hyper-Dimensional Computing Pipeline;Frontiers in Neuroscience;2022-05-30

4. NVMExplorer: A Framework for Cross-Stack Comparisons of Embedded Non-Volatile Memories;2022 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2022-04

5. Two-step write–verify scheme and impact of the read noise in multilevel RRAM-based inference engine;Semiconductor Science and Technology;2020-10-10

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