14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process-Reference-Cited by-同舟云学术

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14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Sato H.,Honjo H.,Watanabe T.,Niwa M.,Koike H.,Miura S.,Saito T.,Inoue H.,Nasuno T.,Tanigawa T.,Noguchi Y.,Yoshiduka T.,Yasuhira M.,Ikeda S.,Kang S.- Y.,Kubo T.,Yamashita K.,Yagi Y.,Tamura R.,Endoh T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614606.pdf?arnumber=8614606

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Performance enhancement in spin transfer torque magnetic random access memory through in situ cap layer optimization;Journal of Vacuum Science & Technology B;2024-06-25

3. Error-Tolerant Quantized Neural Network Based on Non-Weighted Arithmetic;2024 IEEE 54th International Symposium on Multiple-Valued Logic (ISMVL);2024-05-28

4. The fabrication of spin transfer torque-based magnetoresistive random access memory cell with ultra-low switching power;Japanese Journal of Applied Physics;2024-05-01

5. Revolutionizing Technology with Spintronics: Devices and Their Transformative Applications;Materials Science and Engineering: B;2024-05

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