Preparation of epitaxial HfO2 film (EOT=0.5 nm) on Si substrate using atomic-layer deposition of amorphous film and rapid thermal crystallization (RTC) in an abrupt temperature gradient
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703342.pdf?arnumber=5703342
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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4. The future of ferroelectric field-effect transistor technology;Nature Electronics;2020-10
5. Limits of Gate Dielectrics Scaling;Handbook of Thin Film Deposition;2018
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