Experimental verification of a 3D scaling principle for low V<inf>ce(sat)</inf> IGBT-Reference-Cited by-同舟云学术

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Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Kakushima K.,Hoshii T.,Tsutsui K.,Nakajima A.,Nishizawa S.,Wakabayashi H.,Muneta I.,Sato K.,Matsudai T.,Saito W.,Saraya T.,Itou K.,Fukui M.,Suzuki S.,Kobayashi M.,Takakura T.,Hiramoto T.,Ogura A.,Numasawa Y.,Omura I.,Ohashi H.,Iwai H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838390.pdf?arnumber=7838390

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Scaling on Back-Gate-Controlled IGBT (BC-IGBT);IEEJ Transactions on Electronics, Information and Systems;2024-03-01

2. Study on stress in trench structures during silicon IGBTs process-oxidation;Japanese Journal of Applied Physics;2024-02-14

3. Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors;Japanese Journal of Applied Physics;2024-01-19

4. Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current;IEEE Transactions on Power Electronics;2023-07

5. A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

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