First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond-Reference-Cited by-同舟云学术

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First demonstration of FinFET split-gate MONOS for high-speed and highly-reliable embedded flash in 16/14nm-node and beyond

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Tsuda S.,Kawashima Y.,Sonoda K.,Yoshitomi A.,Mihara T.,Narumi S.,Inoue M.,Muranaka S.,Maruyama T.,Yamashita T.,Yamaguchi Y.,Hisamoto D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838393.pdf?arnumber=7838393

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge;IEEE Transactions on Electron Devices;2023-10

2. Microscopic physical origin of charge traps in 3D NAND flash memories;Japanese Journal of Applied Physics;2023-02-14

3. Atomic and electronic structures of nitrogen vacancies in silicon nitride: Emergence of floating gap states;Physical Review B;2022-10-25

4. Flash: A “Forgotten” Technology in VLSI Design;Frontiers of Quality Electronic Design (QED);2022-09-06

5. A Novel ASIC Design Flow Using Weight-Tunable Binary Neurons as Standard Cells;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-07

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