Real-time study of switching kinetics in integrated 1T/ HfO<inf>x</inf> 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time-Reference-Cited by-同舟云学术

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Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Koveshnikov S.,Matthews K.,Min K.,Gilmer D. C.,Sung M.G.,Deora S.,Li H. F.,Gausepohl S.,Kirsch P. D.,Jammy R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479080.pdf?arnumber=6479080

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