Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies-Reference-Cited by-同舟云学术

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Off-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Koswatta S. O.,Mavilla N.,Bajaj M.,Johnson J.,Gundapaneni S.,Scott C.,Freeman G.,Poindexter D.,McLaughlin P. S.,Mittl S. W.,Sigal L.,Warnock J. D.,Zamdmer N.,Lee S.,Wachnik R.,Lin C-H.,Nowak E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409740.pdf?arnumber=7409740

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Electrical, Thermal Conductance, and Lorenz Numbers for Advanced CMOS Interfaces;IEEE Transactions on Electron Devices;2022-05

2. Reduction of Local Thermal Effects in FinFETs With a Heat-Path Design Methodology;IEEE Electron Device Letters;2021-04

3. Analytical Multistage Thermal Model for FEOL Reliability Considering Self-and Mutual-Heating;IEEE Transactions on Electron Devices;2018-09

4. The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages;AIP Advances;2017-05

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