Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays-Reference-Cited by-同舟云学术

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Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Augustine C.,Raychowdhury A.,Somasekhar D.,Tschanz J.,Roy K.,De Vivek K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703416.pdf?arnumber=5703416

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Analysis of Magnetic Field-Induced Coupling on Hexagonal MTJ Array;IEEE Transactions on Magnetics;2023-03

2. High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM;Micromachines;2022-12-15

3. MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2022-11

4. Performance and Power Estimation of STT-MRAM Main Memory with Reliable System-level Simulation;ACM Transactions on Embedded Computing Systems;2022-01-14

5. On-Chip Non-volatile STT-MRAM for Zero-Standby Power;Enabling the Internet of Things;2017

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