Trapping and high field related issues in GaN power HEMTs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047072.pdf?arnumber=7047072
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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4. High Bandwidth Power Electronics and Magnetic Nanoparticles for Multichannel Magnetogenetic Neurostimulation;2021-06-24
5. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects;Microelectronics Reliability;2020-11
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