Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate-Reference-Cited by-同舟云学术

Record-high 121/62 μA/μm on-currents 3D stacked epi-like Si FETs with and without metal back gate

Published:2013-12 Issue: Volume: Page:
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Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Yang Chih-Chao,Chen Szu-Hung,Shieh Jia-Min,Huang Wen-Hsien,Hsieh Tung-Ying,Shen Chang-Hong,Wu Tsung-Ta,Wang Hsing-Hsiang,Lee Yao-Jen,Hou Fu-Ju,Pan Ci-Ling,Chang-Liao Kuei-Shu,Hu Chenming,Yang Fu-Liang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724719.pdf?arnumber=6724719

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