Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices-Reference-Cited by-同舟云学术

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Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lin J.,Annadi ,Sonde S.,Chen C.,Stan L.,Achari K.V.L.V,Ramanathan S.,Guha S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838541.pdf?arnumber=7838541

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mott memristor based stochastic neurons for probabilistic computing;Nanotechnology;2024-04-30

2. Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron;IEEE Transactions on Electron Devices;2024-01

3. SPICE Modeling of Insulator-Metal Transition Devices with Hysteresis;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27

4. Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-04

5. Volatile threshold switching memristor: An emerging enabler in the AIoT era;Journal of Semiconductors;2023-05-01

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